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The installation of the Strata Dual Beam FIB/STEM is complete. The ion column on the Strata is spec'd to 7 nm resolution for precise milling of features on the latest generation of 90 and 65 nm semicondutor devices. It features FEI's Sirion electron column for high resolution imaging in secondary electron, back-scattered electron and scanning tranmission electron modes. The Strata is equipped with FEI's flipstage that allows samples to be serially imaged, with the STEM detector, and then further thinned, with the ion beam. This capability will reduce the challenges of preparing sub-50 nm defects for TEM.
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