|
Technique
|
Description
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Typical
Applications
|
Signal Detected
|
Resolution
|
Imaging
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Navigation
Capability
|
Minimum
Spot Size
|
|
Secondary Ion Mass Spectroscopy (SIMS)
|
Mass analysis surface and depth profiling
|
Dopant or compositional element depth analysis
|
Secondary Ions
|
Down to 1e12 at/cm3
|
No
|
No
|
100 μm X 100 μm raster
|
|
Quadrupole Secondary Ion Mass Spectroscopy (Quad SIMS)
|
Thin Film and Shallow Implant Depth Profile
|
Dopant or compositional element depth profile
|
Secondary Ions
|
Down to 1E16 at/cm3
|
No
|
No
|
100 µm X 100 µm raster
|
|
Auger Electron Spectroscopy (AES)
|
Elemental surface analysis
|
Depth profiling with Ar sputter, surface contamination, cross-section analysis
|
Auger electrons
|
0.1-1 at%
|
Yes
|
Yes
|
300 Å
|
|
Electron Spectroscopy for Chemical Analysis
(aka ESCA or XPS)
|
Elemental Surface analysis
|
Depth profiling with Ar sputter, chemical state information, thin film composition analysis
|
Photoelectrons
|
0.1 at%
|
No
|
No
|
20 μm
|
|
X-Ray Diffraction
(XRD)
|
Crystal Orientation Analysis
|
Grain size, orientation, and texture analysis
|
Crytal plane d-spacing
|
+/-.5%
|
No
|
No
|
10 mm X 1 mm STD
special 1mm spot
|
|
X-Ray Reflection
(XRR)
|
Reflectivity Analysis
|
Density, Interfacial Roughness, and Thickness of thin films
|
Reflected X-rays
|
+/- 3% of signals detected
|
No
|
No
|
10 mm x 50 mm
|
|
Atomic Force Microscopy
(AFM)
|
Surface topography
|
Roughness of thin films, and step height information
|
Atomic morphology
|
< 2 Å
|
Yes
|
Yes (Manual)
|
50 Å
|
|
Rutherford Backscattering spectrometry (RBS)
|
Elemental surface analysis |
Thin film stoichiometry and composition and impurity analysis of films and materials |
Backscattered ions |
1 E 14/ cm2
Dependent on mass of target atom.
|
No |
No |
1 mm for macro beam
1 for micro beam
|
|
Ion Channeling
|
Elemental analysis and depth profiling for single crystals |
Lattice location of defects and impurities in single crystal materials |
Backscattered ions |
1 E 14/cm2
Dependent on mass of target atom.
|
No |
No |
1 mm for macro beam
1 um for micro beam
|
|
Micro-Raman Spectroscopy (µ-RS)
|
Molecular composition
|
Defect analysis, thin film monitoring
|
Bond vibration frequencies
|
Sample dependent
|
No
|
Yes
|
1 μm
|
|
Total Reflection X-Ray Fluorescence Spectroscopy (TXRF)
|
Elemental composition
|
Trace contamination on wafer surfaces
|
Secondary x-ray fluorescence
|
1 E 9/cm2
|
Yes
|
Yes
|
1 cm
|