Rutherford Backscattering Spectrometry (RBS)
RBS uses a high-energy (MeV) ion beam to bombard the sample surface. Elastic and inelastical collisions provide chemical information, i.e. the atomic number (Z) of the sample material and thickness based on the scattering depth. The analysis is non-destructive, and standardless.
RBS can also be used to look at structural differences in single crystal materials, called Ion Chaneling. This a good technique to measure lattice defects and strain, as well as interstitial and substitutional impurities.
Some specific applications of RBS are:
1. Evaluation of the thickness and composition (stoichiometry) of thin films or coatings such as oxide, nitrides or thin-film metals on substrates.
2. Intermixing at the interface between dissimilar materials.
3.Impurity analysis, i.e. concentration as a function of depth.
4. Location of lattice impurities, both substitution and interstitial, within single crystal materials.
5. Determination of damage distribution within a single crystal. For example, the distribution of implantation damage including the thickness of an ion- induced amorphous layer.
6.Determination of surface reconstruction.