|
Technique
|
Description
|
Typical
Applications
|
Instrument
|
Navigation
Capability
|
Resolution
|
Minimum
Spot Size
|
Maximum
Sample Size
|
|
Field Emission Scanning Electron Microscopy (FE-SEM)
|
Scanning electron imaging to view samples at magnifications up to 500,000 times.
|
Metrology, construction analysis, defect analysis
|
Hitachi S4800, FEI XL50
|
Yes
|
6 Å
|
45 Å
|
Up to 200 mm wafer
|
|
Energy Dispersive X-Ray Spectroscopy
(EDS)
|
Elemental analysis
|
Defect analysis, construction analysis
|
NORAN System SIX
|
Yes
|
120 eV
|
1 um
|
Up to 200 mm wafer
|
|
Back Scattered Electron Imaging
(BSE)
|
Contrast imaging of wafer cross section. Provides composition information
|
Process identification
|
Hitachi S4800
|
Yes
|
6 Å
|
45 Å
|
2-4 mm square sample
|
|
Focused Ion Beam
(FIB)
|
Sample preparation technique using ion beam to mill into very specific area of interest.
|
Defect analysis, construction analysis, TEM sample prep
|
FEI XL830, XL835 Dual Beam systems
|
Yes
|
3 nm (e-beam)
|
na
|
Up to 200 mm wafer
|
|
Dualbeam-STEM
(FIB)
|
Sample preparation technique using ion beam to mill into very specific area of interest. In-situ imaging using Scanning Transmission Electron Microscopy.
|
Defect analysis, construction analysis, TEM sample prep, Circuit edit
|
FEI Strata 400S
|
No
|
1 nm @ 15 kV ebeam
2 nm @ 5 kV ebeam
|
na
|
Max:80 mm diameter, 20 mm thickness
|
|
Transmission Electron Microscopy
(TEM)
|
Imaging of electrons transmitted through <100 nm thick speciman.
|
Construction analysis, crystal phase, lattice damage and grain orientation
|
JEM-ARM200F
JEOL 2010
Philips (FEI) CM300
|
Yes with FIB preparation
|
2 Å
|
10 Å
|
Up to 200 mm wafer using FIB preparation
|
|
Analytical Transmission Electron Microscopy
(AEM)
|
Elemental analysis on TEM sample.
|
Defect analysis, construction analysis
|
Gatan GIF-2002 Electron Energy Loss Spectrometer and Noran System Six EDXS
|
Yes with FIB preparation
|
2 Å
|
10 Å
|
Up to 200 mm wafer using FIB preparation
|